SQM200N04-1M7L_GE3 Pricing (USD) [51012PC Stock]
- 1 pcs$0.76651
- 800 pcs$0.68986
- Nimewo Pati:
- SQM200N04-1M7L_GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 40V 200A TO-263.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SQM200N04-1M7L_GE3 electronic components. SQM200N04-1M7L_GE3 can be shipped within 24 hours after order. If you have any demands for SQM200N04-1M7L_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQM200N04-1M7L_GE3 Atribi pwodwi yo
Nimewo Pati :
SQM200N04-1M7L_GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 40V 200A TO-263
Seri :
TrenchFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
200A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
1.7 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
291nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
11168pF @ 20V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
375W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-263-7
Pake / Ka :
TO-263-7, D²Pak (6 Leads + Tab)
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