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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. NTLLD4901NFTWG

ON Semiconductor - NTLLD4901NFTWG

KEY Part #: K6523262

NTLLD4901NFTWG Pricing (USD) [168688PC Stock]

  • 1 pcs$0.22036
  • 3,000 pcs$0.21927
Nimewo Pati:
NTLLD4901NFTWG
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET 2N-CH 30V 5.5A/6.3A WDFN8.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Bridge rèktifikateur, Tiristors - SCR - Modil yo and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in ON Semiconductor NTLLD4901NFTWG electronic components. NTLLD4901NFTWG can be shipped within 24 hours after order. If you have any demands for NTLLD4901NFTWG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTLLD4901NFTWG Atribi pwodwi yo

Nimewo Pati : NTLLD4901NFTWG
Manifakti : ON Semiconductor
Deskripsyon : MOSFET 2N-CH 30V 5.5A/6.3A WDFN8
Seri : -
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.5A, 6.3A
RD sou (Max) @ Id, Vgs : 17.4 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 12nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 605pF @ 15V
Pouvwa - Max : 800mW, 810mW
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-PowerWDFN
Pake Aparèy Founisè : 8-WDFN (3x3)

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