SI7216DN-T1-GE3 Pricing (USD) [122476PC Stock]
- 1 pcs$0.30200
- 3,000 pcs$0.25520
- Nimewo Pati:
- SI7216DN-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET 2N-CH 40V 6A PPAK 1212-8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays, Transistors - IGBTs - Arrays, Tiristors - SCR - Modil yo, Transistors - IGBTs - Modil yo and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI7216DN-T1-GE3 electronic components. SI7216DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7216DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7216DN-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SI7216DN-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 2N-CH 40V 6A PPAK 1212-8
Seri :
TrenchFET®
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6A
RD sou (Max) @ Id, Vgs :
32 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
19nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
670pF @ 20V
Pouvwa - Max :
20.8W
Operating Tanperati :
-50°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
PowerPAK® 1212-8 Dual
Pake Aparèy Founisè :
PowerPAK® 1212-8 Dual
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