Nimewo Pati :
TPN1110ENH,L1Q
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 200V 7.2A 8TSON
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7.2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
114 mOhm @ 3.6A, 10V
Vgs (th) (Max) @ Id :
4V @ 200µA
Chaje Gate (Qg) (Max) @ Vgs :
7nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
600pF @ 100V
Disipasyon Pouvwa (Max) :
700mW (Ta), 39W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-TSON Advance (3.3x3.3)