TPN1110ENH,L1Q Pricing (USD) [151133PC Stock]
- 1 pcs$0.25703
- 5,000 pcs$0.25575
- Nimewo Pati:
- TPN1110ENH,L1Q
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CH 200V 7.2A 8TSON.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Diodes - Zener - Single, Transistors - FETs, MOSFETs - RF, Diodes - Bridge rèktifikateur, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Modil pouvwa chofè, Transistors - FETs, MOSFETs - Arrays and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TPN1110ENH,L1Q electronic components. TPN1110ENH,L1Q can be shipped within 24 hours after order. If you have any demands for TPN1110ENH,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPN1110ENH,L1Q Atribi pwodwi yo
Nimewo Pati :
TPN1110ENH,L1Q
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 200V 7.2A 8TSON
Seri :
U-MOSVIII-H
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7.2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
114 mOhm @ 3.6A, 10V
Vgs (th) (Max) @ Id :
4V @ 200µA
Chaje Gate (Qg) (Max) @ Vgs :
7nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
600pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
700mW (Ta), 39W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-TSON Advance (3.3x3.3)
Pake / Ka :
8-PowerVDFN
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