[1252PC Stock]
- Nimewo Pati:
- IPP80N06S4L05AKSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 60V 80A TO220-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Single, Transistors - IGBTs - Modil yo, Modil pouvwa chofè, Tiristors - TRIACs, Tiristors - SCR - Modil yo and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPP80N06S4L05AKSA1 electronic components. IPP80N06S4L05AKSA1 can be shipped within 24 hours after order. If you have any demands for IPP80N06S4L05AKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPP80N06S4L05AKSA1 Atribi pwodwi yo
Nimewo Pati :
IPP80N06S4L05AKSA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 60V 80A TO220-3
Seri :
OptiMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
80A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
5.1 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 60µA
Chaje Gate (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (Max) :
±16V
Antre kapasite (Ciss) (Max) @ Vds :
8180pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
107W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PG-TO220-3-1
Pake / Ka :
TO-220-3
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