IXYS - IXTP6N50D2

KEY Part #: K6398650

IXTP6N50D2 Pricing (USD) [15612PC Stock]

  • 1 pcs$2.90421
  • 10 pcs$2.59352
  • 100 pcs$2.12669
  • 500 pcs$1.72210
  • 1,000 pcs$1.45237

Nimewo Pati:
IXTP6N50D2
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 500V 6A TO220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Tiristors - TRIACs, Transistors - Pwogramasyon Unijunction, Tiristors - SCR, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Single and Diodes - Zener - Single ...
Avantaj konpetitif:
We specialize in IXYS IXTP6N50D2 electronic components. IXTP6N50D2 can be shipped within 24 hours after order. If you have any demands for IXTP6N50D2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTP6N50D2 Atribi pwodwi yo

Nimewo Pati : IXTP6N50D2
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 500V 6A TO220AB
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : -
RD sou (Max) @ Id, Vgs : 500 mOhm @ 3A, 0V
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : 96nC @ 5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2800pF @ 25V
Karakteristik FET : Depletion Mode
Disipasyon Pouvwa (Max) : 300W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB
Pake / Ka : TO-220-3

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