Nimewo Pati :
SIR606DP-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 100V 37A POWERPAKSO
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
37A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
16.2 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
3.6V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
22nC @ 6V
Antre kapasite (Ciss) (Max) @ Vds :
1360pF @ 50V
Disipasyon Pouvwa (Max) :
44.5W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerPAK® SO-8
Pake / Ka :
PowerPAK® SO-8