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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FDD4N60NZ

ON Semiconductor - FDD4N60NZ

KEY Part #: K6392696

FDD4N60NZ Pricing (USD) [231873PC Stock]

  • 1 pcs$0.16631
  • 2,500 pcs$0.16549
Nimewo Pati:
FDD4N60NZ
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N CH 600V 3.4A DPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Single, Diodes - Bridge rèktifikateur, Modil pouvwa chofè, Tiristors - SCR and Diodes - RF ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDD4N60NZ electronic components. FDD4N60NZ can be shipped within 24 hours after order. If you have any demands for FDD4N60NZ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDD4N60NZ Atribi pwodwi yo

Nimewo Pati : FDD4N60NZ
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N CH 600V 3.4A DPAK
Seri : UniFET-II™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.4A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 2.5 Ohm @ 1.7A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 10.8nC @ 10V
Vgs (Max) : ±25V
Antre kapasite (Ciss) (Max) @ Vds : 510pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 114W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : DPAK
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

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