STMicroelectronics - STD6NM60N

KEY Part #: K6414281

[12809PC Stock]


    Nimewo Pati:
    STD6NM60N
    Manifakti:
    STMicroelectronics
    Detaye deskripsyon:
    MOSFET N-CH 600V 4.6A DPAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - RF, Tiristors - SCR - Modil yo, Tiristors - SCR and Transistors - IGBTs - Modil yo ...
    Avantaj konpetitif:
    We specialize in STMicroelectronics STD6NM60N electronic components. STD6NM60N can be shipped within 24 hours after order. If you have any demands for STD6NM60N, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    STD6NM60N Atribi pwodwi yo

    Nimewo Pati : STD6NM60N
    Manifakti : STMicroelectronics
    Deskripsyon : MOSFET N-CH 600V 4.6A DPAK
    Seri : MDmesh™ II
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 600V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.6A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 920 mOhm @ 2.3A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 13nC @ 10V
    Vgs (Max) : ±25V
    Antre kapasite (Ciss) (Max) @ Vds : 420pF @ 50V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 45W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : DPAK
    Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63