[63PC Stock]
- Nimewo Pati:
- IXFC14N60P
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 600V 8A ISOPLUS220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Single, Tiristors - SCR - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Arrays, Tiristors - DIACs, SIDACs and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in IXYS IXFC14N60P electronic components. IXFC14N60P can be shipped within 24 hours after order. If you have any demands for IXFC14N60P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFC14N60P Atribi pwodwi yo
Nimewo Pati :
IXFC14N60P
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 600V 8A ISOPLUS220
Seri :
HiPerFET™, PolarHT™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
630 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 2.5mA
Chaje Gate (Qg) (Max) @ Vgs :
36nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
2500pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
125W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
ISOPLUS220™
Pake / Ka :
ISOPLUS220™
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