IXTP110N055T2 Pricing (USD) [56679PC Stock]
- 1 pcs$0.98254
- 10 pcs$0.88846
- 100 pcs$0.71403
- 500 pcs$0.55535
- 1,000 pcs$0.46014
- Nimewo Pati:
- IXTP110N055T2
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 55V 110A TO-220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Arrays, Tiristors - SCR, Tiristors - SCR - Modil yo, Diodes - Zener - Single, Transistors - Pwogramasyon Unijunction and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in IXYS IXTP110N055T2 electronic components. IXTP110N055T2 can be shipped within 24 hours after order. If you have any demands for IXTP110N055T2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTP110N055T2 Atribi pwodwi yo
Nimewo Pati :
IXTP110N055T2
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 55V 110A TO-220
Seri :
TrenchT2™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
110A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
6.6 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
57nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
3060pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
180W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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