[3233PC Stock]
- Nimewo Pati:
- IXFM11N80
- Manifakti:
- IXYS
- Detaye deskripsyon:
- POWER MOSFET TO-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Arrays, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Arrays and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in IXYS IXFM11N80 electronic components. IXFM11N80 can be shipped within 24 hours after order. If you have any demands for IXFM11N80, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFM11N80 Atribi pwodwi yo
Nimewo Pati :
IXFM11N80
Manifakti :
IXYS
Deskripsyon :
POWER MOSFET TO-3
Seri :
HiPerFET™
Estati Pati :
Last Time Buy
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
11A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
950 mOhm @ 5.5A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs :
155nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
4200pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
300W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-204AA
Pake / Ka :
TO-204AA, TO-3
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