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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. TN2130K1-G

Microchip Technology - TN2130K1-G

KEY Part #: K6392685

TN2130K1-G Pricing (USD) [189161PC Stock]

  • 1 pcs$0.20033
  • 3,000 pcs$0.19933
Nimewo Pati:
TN2130K1-G
Manifakti:
Microchip Technology
Detaye deskripsyon:
MOSFET N-CH 300V 0.085A SOT23-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - FETs, MOSFETs - RF, Modil pouvwa chofè, Diodes - Zener - Arrays, Transistors - IGBTs - Modil yo, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Diodes - Zener - Single ...
Avantaj konpetitif:
We specialize in Microchip Technology TN2130K1-G electronic components. TN2130K1-G can be shipped within 24 hours after order. If you have any demands for TN2130K1-G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TN2130K1-G Atribi pwodwi yo

Nimewo Pati : TN2130K1-G
Manifakti : Microchip Technology
Deskripsyon : MOSFET N-CH 300V 0.085A SOT23-3
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 300V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 85mA (Tj)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V
RD sou (Max) @ Id, Vgs : 25 Ohm @ 120mA, 4.5V
Vgs (th) (Max) @ Id : 2.4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 50pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 360mW (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-236AB (SOT23)
Pake / Ka : TO-236-3, SC-59, SOT-23-3
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