IXYS - IXTX8N150L

KEY Part #: K6395118

IXTX8N150L Pricing (USD) [3635PC Stock]

  • 1 pcs$13.17369
  • 30 pcs$13.10815

Nimewo Pati:
IXTX8N150L
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 1500V 8A PLUS247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - TRIACs, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
We specialize in IXYS IXTX8N150L electronic components. IXTX8N150L can be shipped within 24 hours after order. If you have any demands for IXTX8N150L, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTX8N150L Atribi pwodwi yo

Nimewo Pati : IXTX8N150L
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 1500V 8A PLUS247
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 1500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 20V
RD sou (Max) @ Id, Vgs : 3.6 Ohm @ 4A, 20V
Vgs (th) (Max) @ Id : 8V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 250nC @ 15V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 8000pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 700W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PLUS247™-3
Pake / Ka : TO-247-3