IXFP38N30X3M Pricing (USD) [22265PC Stock]
- 1 pcs$1.85094
- Nimewo Pati:
- IXFP38N30X3M
- Manifakti:
- IXYS
- Detaye deskripsyon:
- FET N-CHANNEL.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - TRIACs, Transistors - IGBTs - Single, Diodes - Zener - Arrays, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in IXYS IXFP38N30X3M electronic components. IXFP38N30X3M can be shipped within 24 hours after order. If you have any demands for IXFP38N30X3M, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFP38N30X3M Atribi pwodwi yo
Nimewo Pati :
IXFP38N30X3M
Manifakti :
IXYS
Deskripsyon :
FET N-CHANNEL
Seri :
HiPerFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
300V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
38A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-
RD sou (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
35nC @ 15V
Vgs (Max) :
-
Antre kapasite (Ciss) (Max) @ Vds :
2440pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
34W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220 Isolated Tab
Pake / Ka :
TO-220-3 Full Pack, Isolated Tab
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