DMT68M8LSS-13 Pricing (USD) [376192PC Stock]
- 1 pcs$0.09832
- Nimewo Pati:
- DMT68M8LSS-13
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CHANNEL 60V 28.9A 8SO.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Arrays, Tiristors - TRIACs, Transistors - IGBTs - Single and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMT68M8LSS-13 electronic components. DMT68M8LSS-13 can be shipped within 24 hours after order. If you have any demands for DMT68M8LSS-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMT68M8LSS-13 Atribi pwodwi yo
Nimewo Pati :
DMT68M8LSS-13
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CHANNEL 60V 28.9A 8SO
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
28.9A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
8.5 mOhm @ 13.5A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
31.8nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2107pF @ 30V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.9W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SO
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
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