[3486PC Stock]
- Nimewo Pati:
- SI9410DY,518
- Manifakti:
- NXP USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 30V SOT96-1.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Transistors - Pwogramasyon Unijunction, Tiristors - TRIACs, Diodes - Varyab kapasite (Varicaps, Varactors) and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in NXP USA Inc. SI9410DY,518 electronic components. SI9410DY,518 can be shipped within 24 hours after order. If you have any demands for SI9410DY,518, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI9410DY,518 Atribi pwodwi yo
Nimewo Pati :
SI9410DY,518
Manifakti :
NXP USA Inc.
Deskripsyon :
MOSFET N-CH 30V SOT96-1
Seri :
TrenchMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
-
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
30 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
50nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
-
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.5W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SO
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
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