RUS100N02TB Pricing (USD) [110890PC Stock]
- 1 pcs$0.37589
- 2,500 pcs$0.37402
- Nimewo Pati:
- RUS100N02TB
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 20V 10A 8SOP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Diodes - RF, Tiristors - TRIACs, Transistors - IGBTs - Single and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor RUS100N02TB electronic components. RUS100N02TB can be shipped within 24 hours after order. If you have any demands for RUS100N02TB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RUS100N02TB Atribi pwodwi yo
Nimewo Pati :
RUS100N02TB
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N-CH 20V 10A 8SOP
Seri :
-
Estati Pati :
Not For New Designs
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.5V, 4.5V
RD sou (Max) @ Id, Vgs :
12 mOhm @ 10A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
24nC @ 4.5V
Vgs (Max) :
±10V
Antre kapasite (Ciss) (Max) @ Vds :
2250pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2W (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SOP
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
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