DMG10N60SCT Pricing (USD) [66110PC Stock]
- 1 pcs$0.59144
- 50 pcs$0.55540
- Nimewo Pati:
- DMG10N60SCT
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 600V 12A TO220AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Diodes - Rèkteur - Single, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - JFETs, Transistors - IGBTs - Single and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMG10N60SCT electronic components. DMG10N60SCT can be shipped within 24 hours after order. If you have any demands for DMG10N60SCT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMG10N60SCT Atribi pwodwi yo
Nimewo Pati :
DMG10N60SCT
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 600V 12A TO220AB
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
12A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
750 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
35nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
1587pF @ 16V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
178W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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