IXTN110N20L2 Pricing (USD) [2702PC Stock]
- 1 pcs$17.71904
- 10 pcs$17.63088
- Nimewo Pati:
- IXTN110N20L2
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 200V 100A SOT-227.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - Objektif espesyal, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - DIACs, SIDACs, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in IXYS IXTN110N20L2 electronic components. IXTN110N20L2 can be shipped within 24 hours after order. If you have any demands for IXTN110N20L2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTN110N20L2 Atribi pwodwi yo
Nimewo Pati :
IXTN110N20L2
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 200V 100A SOT-227
Seri :
Linear L2™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
24 mOhm @ 55A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 3mA
Chaje Gate (Qg) (Max) @ Vgs :
500nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
23000pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
735W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SOT-227B
Pake / Ka :
SOT-227-4, miniBLOC
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