Vishay Siliconix - IRCZ34PBF

KEY Part #: K6412007

[13595PC Stock]


    Nimewo Pati:
    IRCZ34PBF
    Manifakti:
    Vishay Siliconix
    Detaye deskripsyon:
    MOSFET N-CH 60V 30A TO-220-5.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Tiristors - SCR, Transistors - IGBTs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - DIACs, SIDACs, Tiristors - TRIACs, Modil pouvwa chofè and Diodes - Rèkteur - Arrays ...
    Avantaj konpetitif:
    We specialize in Vishay Siliconix IRCZ34PBF electronic components. IRCZ34PBF can be shipped within 24 hours after order. If you have any demands for IRCZ34PBF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRCZ34PBF Atribi pwodwi yo

    Nimewo Pati : IRCZ34PBF
    Manifakti : Vishay Siliconix
    Deskripsyon : MOSFET N-CH 60V 30A TO-220-5
    Seri : HEXFET®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 60V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 30A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 50 mOhm @ 18A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 46nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 1300pF @ 25V
    Karakteristik FET : Current Sensing
    Disipasyon Pouvwa (Max) : 88W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : TO-220-5
    Pake / Ka : TO-220-5