IXYS - IXFK80N20Q

KEY Part #: K6412984

IXFK80N20Q Pricing (USD) [13257PC Stock]

  • 25 pcs$5.39117

Nimewo Pati:
IXFK80N20Q
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 200V 80A TO-264AA.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - JFETs, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Single, Tiristors - SCR, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in IXYS IXFK80N20Q electronic components. IXFK80N20Q can be shipped within 24 hours after order. If you have any demands for IXFK80N20Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFK80N20Q Atribi pwodwi yo

Nimewo Pati : IXFK80N20Q
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 200V 80A TO-264AA
Seri : HiPerFET™
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 80A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 28 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id : 4V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs : 180nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 4600pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 360W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-264AA (IXFK)
Pake / Ka : TO-264-3, TO-264AA

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