IXYS - IXFX64N60P

KEY Part #: K6399521

IXFX64N60P Pricing (USD) [5743PC Stock]

  • 1 pcs$8.67298
  • 10 pcs$7.50071
  • 100 pcs$6.37561

Nimewo Pati:
IXFX64N60P
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 600V 64A PLUS247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR, Diodes - Zener - Arrays, Diodes - RF, Transistors - IGBTs - Modil yo and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in IXYS IXFX64N60P electronic components. IXFX64N60P can be shipped within 24 hours after order. If you have any demands for IXFX64N60P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFX64N60P Atribi pwodwi yo

Nimewo Pati : IXFX64N60P
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 600V 64A PLUS247
Seri : HiPerFET™, PolarHT™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 64A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 96 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id : 5V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs : 200nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 12000pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1040W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PLUS247™-3
Pake / Ka : TO-247-3

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