Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N/P-CH 25V SSOT-6
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
680mA, 460mA
RD sou (Max) @ Id, Vgs :
450 mOhm @ 500mA, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
2.3nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
50pF @ 10V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-23-6 Thin, TSOT-23-6
Pake Aparèy Founisè :
SuperSOT™-6