[12983PC Stock]
- Nimewo Pati:
- IRFP23N50L
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 500V 23A TO-247AC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Transistors - Objektif espesyal, Tiristors - SCR, Diodes - Rèkteur - Arrays, Tiristors - TRIACs, Tiristors - DIACs, SIDACs and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix IRFP23N50L electronic components. IRFP23N50L can be shipped within 24 hours after order. If you have any demands for IRFP23N50L, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFP23N50L Atribi pwodwi yo
Nimewo Pati :
IRFP23N50L
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 500V 23A TO-247AC
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
23A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
235 mOhm @ 14A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
150nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
3600pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
370W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247-3
Pake / Ka :
TO-247-3
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