Nimewo Pati :
BUK9E4R4-80E,127
Deskripsyon :
MOSFET N-CH 80V 120A I2PAK
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
5V, 10V
RD sou (Max) @ Id, Vgs :
4.2 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
123nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
17130pF @ 25V
Disipasyon Pouvwa (Max) :
349W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
I2PAK
Pake / Ka :
TO-262-3 Long Leads, I²Pak, TO-262AA