NXP USA Inc. - BUK9E4R4-80E,127

KEY Part #: K6400030

[3538PC Stock]


    Nimewo Pati:
    BUK9E4R4-80E,127
    Manifakti:
    NXP USA Inc.
    Detaye deskripsyon:
    MOSFET N-CH 80V 120A I2PAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Diodes - Bridge rèktifikateur, Tiristors - SCR, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Single, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Arrays and Transistors - IGBTs - Single ...
    Avantaj konpetitif:
    We specialize in NXP USA Inc. BUK9E4R4-80E,127 electronic components. BUK9E4R4-80E,127 can be shipped within 24 hours after order. If you have any demands for BUK9E4R4-80E,127, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BUK9E4R4-80E,127 Atribi pwodwi yo

    Nimewo Pati : BUK9E4R4-80E,127
    Manifakti : NXP USA Inc.
    Deskripsyon : MOSFET N-CH 80V 120A I2PAK
    Seri : TrenchMOS™
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 80V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 120A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V, 10V
    RD sou (Max) @ Id, Vgs : 4.2 mOhm @ 25A, 10V
    Vgs (th) (Max) @ Id : 2.1V @ 1mA
    Chaje Gate (Qg) (Max) @ Vgs : 123nC @ 5V
    Vgs (Max) : ±10V
    Antre kapasite (Ciss) (Max) @ Vds : 17130pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 349W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : I2PAK
    Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

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