BUK9Y59-60E,115 Pricing (USD) [407926PC Stock]
- 1 pcs$0.09067
- 1,500 pcs$0.08934
- Nimewo Pati:
- BUK9Y59-60E,115
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 60V LFPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - JFETs, Tiristors - SCR - Modil yo, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - RF and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. BUK9Y59-60E,115 electronic components. BUK9Y59-60E,115 can be shipped within 24 hours after order. If you have any demands for BUK9Y59-60E,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BUK9Y59-60E,115 Atribi pwodwi yo
Nimewo Pati :
BUK9Y59-60E,115
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 60V LFPAK
Seri :
Automotive, AEC-Q101, TrenchMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
16.7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
5V
RD sou (Max) @ Id, Vgs :
52 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
6.1nC @ 5V
Vgs (Max) :
±10V
Antre kapasite (Ciss) (Max) @ Vds :
715pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
37W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
LFPAK56, Power-SO8
Pake / Ka :
SC-100, SOT-669
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