Nimewo Pati :
TK56E12N1,S1X
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N CH 120V 56A TO-220
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
120V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
56A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
7 mOhm @ 28A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
69nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
4200pF @ 60V
Disipasyon Pouvwa (Max) :
168W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220