IPD60R800CEATMA1 Pricing (USD) [2682PC Stock]
- 2,500 pcs$0.11670
- Nimewo Pati:
- IPD60R800CEATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 600V TO-252-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - IGBTs - Modil yo, Transistors - JFETs, Transistors - Objektif espesyal, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - RF and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPD60R800CEATMA1 electronic components. IPD60R800CEATMA1 can be shipped within 24 hours after order. If you have any demands for IPD60R800CEATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD60R800CEATMA1 Atribi pwodwi yo
Nimewo Pati :
IPD60R800CEATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 600V TO-252-3
Seri :
CoolMOS™ CE
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
800 mOhm @ 2A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 170µA
Chaje Gate (Qg) (Max) @ Vgs :
17.2nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
373pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
48W (Tc)
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-252-3
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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