Infineon Technologies - IPD60R800CEATMA1

KEY Part #: K6402503

IPD60R800CEATMA1 Pricing (USD) [2682PC Stock]

  • 2,500 pcs$0.11670

Nimewo Pati:
IPD60R800CEATMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 600V TO-252-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Diodes - RF, Tiristors - TRIACs, Transistors - JFETs, Diodes - Varyab kapasite (Varicaps, Varactors), Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Modil yo and Diodes - Zener - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD60R800CEATMA1 Atribi pwodwi yo

Nimewo Pati : IPD60R800CEATMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 600V TO-252-3
Seri : CoolMOS™ CE
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 800 mOhm @ 2A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 170µA
Chaje Gate (Qg) (Max) @ Vgs : 17.2nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 373pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 48W (Tc)
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-252-3
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

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