TSM061NA03CV RGG Pricing (USD) [194697PC Stock]
- 1 pcs$0.18997
- Nimewo Pati:
- TSM061NA03CV RGG
- Manifakti:
- Taiwan Semiconductor Corporation
- Detaye deskripsyon:
- MOSFET N-CH 30V 66A 8PDFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Tiristors - TRIACs, Transistors - JFETs, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Modil yo, Tiristors - SCR, Diodes - Rèkteur - Single and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Taiwan Semiconductor Corporation TSM061NA03CV RGG electronic components. TSM061NA03CV RGG can be shipped within 24 hours after order. If you have any demands for TSM061NA03CV RGG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM061NA03CV RGG Atribi pwodwi yo
Nimewo Pati :
TSM061NA03CV RGG
Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
MOSFET N-CH 30V 66A 8PDFN
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
66A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
6.1 mOhm @ 16A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
19.3nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1136pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
44.6W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-PDFN (3x3)
Pake / Ka :
8-PowerWDFN
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