NTS4101PT1G Pricing (USD) [969837PC Stock]
- 1 pcs$0.03814
- 3,000 pcs$0.03720
- Nimewo Pati:
- NTS4101PT1G
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET P-CH 20V 1.37A SOT-323.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Diodes - RF, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Arrays, Diodes - Rèkteur - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor NTS4101PT1G electronic components. NTS4101PT1G can be shipped within 24 hours after order. If you have any demands for NTS4101PT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NTS4101PT1G Atribi pwodwi yo
Nimewo Pati :
NTS4101PT1G
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET P-CH 20V 1.37A SOT-323
Seri :
-
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.37A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
120 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
9nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
840pF @ 20V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
329mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SC-70-3 (SOT323)
Pake / Ka :
SC-70, SOT-323
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