Toshiba Semiconductor and Storage - TPN4R712MD,L1Q

KEY Part #: K6409736

TPN4R712MD,L1Q Pricing (USD) [342569PC Stock]

  • 1 pcs$0.11510
  • 5,000 pcs$0.11453

Nimewo Pati:
TPN4R712MD,L1Q
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET P-CH 20V 36A 8TSON ADV.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Single, Diodes - Bridge rèktifikateur, Transistors - Objektif espesyal, Transistors - JFETs, Transistors - Pwogramasyon Unijunction and Tiristors - SCR ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPN4R712MD,L1Q Atribi pwodwi yo

Nimewo Pati : TPN4R712MD,L1Q
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET P-CH 20V 36A 8TSON ADV
Seri : U-MOSVI
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 36A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
RD sou (Max) @ Id, Vgs : 4.7 mOhm @ 18A, 4.5V
Vgs (th) (Max) @ Id : 1.2V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 65nC @ 5V
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : 4300pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 42W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-TSON Advance (3.3x3.3)
Pake / Ka : 8-PowerVDFN