Nimewo Pati :
TPN4R712MD,L1Q
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET P-CH 20V 36A 8TSON ADV
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
36A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
4.7 mOhm @ 18A, 4.5V
Vgs (th) (Max) @ Id :
1.2V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
65nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
4300pF @ 10V
Disipasyon Pouvwa (Max) :
42W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-TSON Advance (3.3x3.3)