Nimewo Pati :
IRFD9220PBF
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CH 200V 0.56A 4-DIP
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
560mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.5 Ohm @ 340mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
15nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
340pF @ 25V
Disipasyon Pouvwa (Max) :
1W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
4-DIP, Hexdip, HVMDIP
Pake / Ka :
4-DIP (0.300", 7.62mm)