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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. NTGD4167CT1G

ON Semiconductor - NTGD4167CT1G

KEY Part #: K6522139

NTGD4167CT1G Pricing (USD) [585386PC Stock]

  • 1 pcs$0.06350
  • 3,000 pcs$0.06319
Nimewo Pati:
NTGD4167CT1G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N/P-CH 30V 6-TSOP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - IGBTs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Single, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Arrays and Diodes - RF ...
Avantaj konpetitif:
We specialize in ON Semiconductor NTGD4167CT1G electronic components. NTGD4167CT1G can be shipped within 24 hours after order. If you have any demands for NTGD4167CT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTGD4167CT1G Atribi pwodwi yo

Nimewo Pati : NTGD4167CT1G
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N/P-CH 30V 6-TSOP
Seri : -
Estati Pati : Active
FET Kalite : N and P-Channel
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.6A, 1.9A
RD sou (Max) @ Id, Vgs : 90 mOhm @ 2.6A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 5.5nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds : 295pF @ 15V
Pouvwa - Max : 900mW
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : SOT-23-6 Thin, TSOT-23-6
Pake Aparèy Founisè : 6-TSOP

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