Taiwan Semiconductor Corporation - TSM60NB150CF C0G

KEY Part #: K6398320

TSM60NB150CF C0G Pricing (USD) [31382PC Stock]

  • 1 pcs$1.31329

Nimewo Pati:
TSM60NB150CF C0G
Manifakti:
Taiwan Semiconductor Corporation
Detaye deskripsyon:
MOSFET N-CH 600V 24A ITO220S.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays, Transistors - Objektif espesyal, Diodes - Zener - Arrays and Diodes - Varyab kapasite (Varicaps, Varactors) ...
Avantaj konpetitif:
We specialize in Taiwan Semiconductor Corporation TSM60NB150CF C0G electronic components. TSM60NB150CF C0G can be shipped within 24 hours after order. If you have any demands for TSM60NB150CF C0G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TSM60NB150CF C0G Atribi pwodwi yo

Nimewo Pati : TSM60NB150CF C0G
Manifakti : Taiwan Semiconductor Corporation
Deskripsyon : MOSFET N-CH 600V 24A ITO220S
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 24A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 150 mOhm @ 4.3A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 43nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 1765pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 62.5W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : ITO-220S
Pake / Ka : TO-220-3 Full Pack