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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NTQS6463R2

ON Semiconductor - NTQS6463R2

KEY Part #: K6413855

[12956PC Stock]

    Nimewo Pati:
    NTQS6463R2
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET P-CH 20V 6.8A 8-TSSOP.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Tiristors - SCR - Modil yo, Transistors - JFETs and Transistors - IGBTs - Single ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor NTQS6463R2 electronic components. NTQS6463R2 can be shipped within 24 hours after order. If you have any demands for NTQS6463R2, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    NTQS6463R2 Atribi pwodwi yo

    Nimewo Pati : NTQS6463R2
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET P-CH 20V 6.8A 8-TSSOP
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : P-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 20V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.8A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
    RD sou (Max) @ Id, Vgs : 20 mOhm @ 6.8A, 4.5V
    Vgs (th) (Max) @ Id : 900mV @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 50nC @ 5V
    Vgs (Max) : ±12V
    Antre kapasite (Ciss) (Max) @ Vds : -
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 930mW (Ta)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : 8-TSSOP
    Pake / Ka : 8-TSSOP (0.173", 4.40mm Width)

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