PMDPB30XN,115 Pricing (USD) [503533PC Stock]
- 1 pcs$0.11729
- 3,000 pcs$0.11670
- Nimewo Pati:
- PMDPB30XN,115
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET 2N-CH 20V 4A 6HUSON.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Bridge rèktifikateur and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PMDPB30XN,115 electronic components. PMDPB30XN,115 can be shipped within 24 hours after order. If you have any demands for PMDPB30XN,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMDPB30XN,115 Atribi pwodwi yo
Nimewo Pati :
PMDPB30XN,115
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET 2N-CH 20V 4A 6HUSON
Seri :
-
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4A
RD sou (Max) @ Id, Vgs :
40 mOhm @ 3A, 4.5V
Vgs (th) (Max) @ Id :
900mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
21.7nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
660pF @ 10V
Pouvwa - Max :
490mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-UDFN Exposed Pad
Pake Aparèy Founisè :
6-HUSON-EP (2x2)
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