IXFA6N120P Pricing (USD) [13208PC Stock]
- 1 pcs$3.42865
- 10 pcs$3.08666
- 100 pcs$2.53804
- 500 pcs$2.12645
- 1,000 pcs$1.85206
- Nimewo Pati:
- IXFA6N120P
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 1200V 6A D2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR - Modil yo, Transistors - Objektif espesyal and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in IXYS IXFA6N120P electronic components. IXFA6N120P can be shipped within 24 hours after order. If you have any demands for IXFA6N120P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFA6N120P Atribi pwodwi yo
Nimewo Pati :
IXFA6N120P
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 1200V 6A D2PAK
Seri :
HiPerFET™, PolarP2™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
2.4 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
92nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
2830pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
250W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-263 (IXFA)
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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