[2458PC Stock]
- Nimewo Pati:
- TK16V60W,LVQ
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N CH 600V 15.8A 5DFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Single, Diodes - Zener - Arrays, Modil pouvwa chofè, Transistors - Objektif espesyal and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TK16V60W,LVQ electronic components. TK16V60W,LVQ can be shipped within 24 hours after order. If you have any demands for TK16V60W,LVQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK16V60W,LVQ Atribi pwodwi yo
Nimewo Pati :
TK16V60W,LVQ
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N CH 600V 15.8A 5DFN
Seri :
DTMOSIV
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
15.8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
190 mOhm @ 7.9A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 790µA
Chaje Gate (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
1350pF @ 300V
Karakteristik FET :
Super Junction
Disipasyon Pouvwa (Max) :
139W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
4-DFN-EP (8x8)
Pake / Ka :
4-VSFN Exposed Pad
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