DMTH6009SPS-13 Pricing (USD) [316141PC Stock]
- 1 pcs$0.11700
- Nimewo Pati:
- DMTH6009SPS-13
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET BVDSS 41V-60V POWERDI506.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single, Diodes - RF and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMTH6009SPS-13 electronic components. DMTH6009SPS-13 can be shipped within 24 hours after order. If you have any demands for DMTH6009SPS-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMTH6009SPS-13 Atribi pwodwi yo
Nimewo Pati :
DMTH6009SPS-13
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET BVDSS 41V-60V POWERDI506
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
12.9A (Ta), 89.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
10 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.8V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
29.3nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1572pF @ 30V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.8W (Ta), 136W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerDI5060-8
Pake / Ka :
8-PowerTDFN
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