Rohm Semiconductor - RW1A020ZPT2R

KEY Part #: K6421401

RW1A020ZPT2R Pricing (USD) [520140PC Stock]

  • 1 pcs$0.07861
  • 8,000 pcs$0.07822

Nimewo Pati:
RW1A020ZPT2R
Manifakti:
Rohm Semiconductor
Detaye deskripsyon:
MOSFET P-CH 12V 2A WEMT6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Single, Tiristors - SCR and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RW1A020ZPT2R Atribi pwodwi yo

Nimewo Pati : RW1A020ZPT2R
Manifakti : Rohm Semiconductor
Deskripsyon : MOSFET P-CH 12V 2A WEMT6
Seri : -
Estati Pati : Not For New Designs
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.5V, 4.5V
RD sou (Max) @ Id, Vgs : 105 mOhm @ 2A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 6.5nC @ 4.5V
Vgs (Max) : ±10V
Antre kapasite (Ciss) (Max) @ Vds : 770pF @ 6V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 700mW (Ta)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 6-WEMT
Pake / Ka : SOT-563, SOT-666