Deskripsyon :
MOSFET 2N-CH 1200V 100A SIC
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Silicon Carbide (SiC)
Drenaj nan Voltage Sous (Vdss) :
1200V (1.2kV)
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
100A (Tc)
RD sou (Max) @ Id, Vgs :
25 mOhm @ 100A, 20V
Vgs (th) (Max) @ Id :
5V @ 10mA
Chaje Gate (Qg) (Max) @ Vgs :
500nC @ 20V
Antre kapasite (Ciss) (Max) @ Vds :
10200pF @ 800V
Operating Tanperati :
-40°C ~ 175°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
Module