IXFH58N20 Pricing (USD) [9185PC Stock]
- 1 pcs$5.15619
- 10 pcs$4.64101
- 100 pcs$3.81598
- 500 pcs$3.19718
- Nimewo Pati:
- IXFH58N20
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 200V 58A TO-247AD.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Diodes - RF, Transistors - IGBTs - Modil yo, Tiristors - SCR - Modil yo, Tiristors - DIACs, SIDACs, Modil pouvwa chofè, Diodes - Bridge rèktifikateur and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in IXYS IXFH58N20 electronic components. IXFH58N20 can be shipped within 24 hours after order. If you have any demands for IXFH58N20, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH58N20 Atribi pwodwi yo
Nimewo Pati :
IXFH58N20
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 200V 58A TO-247AD
Seri :
HiPerFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
58A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
40 mOhm @ 29A, 10V
Vgs (th) (Max) @ Id :
4V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs :
220nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
4400pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
300W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247AD (IXFH)
Pake / Ka :
TO-247-3
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