Global Power Technologies Group - GP1M004A090FH

KEY Part #: K6402709

[2609PC Stock]


    Nimewo Pati:
    GP1M004A090FH
    Manifakti:
    Global Power Technologies Group
    Detaye deskripsyon:
    MOSFET N-CH 900V 4A TO220F.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Diodes - RF, Transistors - IGBTs - Modil yo, Transistors - Objektif espesyal, Diodes - Rèkteur - Single, Tiristors - SCR, Transistors - JFETs and Transistors - Bipolè (BJT) - RF ...
    Avantaj konpetitif:
    We specialize in Global Power Technologies Group GP1M004A090FH electronic components. GP1M004A090FH can be shipped within 24 hours after order. If you have any demands for GP1M004A090FH, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    GP1M004A090FH Atribi pwodwi yo

    Nimewo Pati : GP1M004A090FH
    Manifakti : Global Power Technologies Group
    Deskripsyon : MOSFET N-CH 900V 4A TO220F
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 900V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 4 Ohm @ 2A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 25nC @ 10V
    Vgs (Max) : ±30V
    Antre kapasite (Ciss) (Max) @ Vds : 955pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 38.7W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : TO-220F
    Pake / Ka : TO-220-3 Full Pack

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