Vishay Siliconix - IRFU014PBF

KEY Part #: K6399378

IRFU014PBF Pricing (USD) [64496PC Stock]

  • 1 pcs$0.54771
  • 10 pcs$0.48458
  • 100 pcs$0.38311
  • 500 pcs$0.28104
  • 1,000 pcs$0.22188

Nimewo Pati:
IRFU014PBF
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 60V 7.7A I-PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Diodes - RF, Transistors - FETs, MOSFETs - Arrays, Modil pouvwa chofè, Transistors - IGBTs - Arrays, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in Vishay Siliconix IRFU014PBF electronic components. IRFU014PBF can be shipped within 24 hours after order. If you have any demands for IRFU014PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFU014PBF Atribi pwodwi yo

Nimewo Pati : IRFU014PBF
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 60V 7.7A I-PAK
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7.7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 200 mOhm @ 4.6A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 11nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 300pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.5W (Ta), 25W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-251AA
Pake / Ka : TO-251-3 Short Leads, IPak, TO-251AA