IXYS - IXTQ75N10P

KEY Part #: K6395069

IXTQ75N10P Pricing (USD) [31018PC Stock]

  • 1 pcs$1.46896
  • 30 pcs$1.46166

Nimewo Pati:
IXTQ75N10P
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 100V 75A TO-3P.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Arrays, Diodes - RF, Transistors - IGBTs - Single, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Arrays and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
We specialize in IXYS IXTQ75N10P electronic components. IXTQ75N10P can be shipped within 24 hours after order. If you have any demands for IXTQ75N10P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTQ75N10P Atribi pwodwi yo

Nimewo Pati : IXTQ75N10P
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 100V 75A TO-3P
Seri : PolarHT™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 75A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 25 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id : 5.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 74nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2250pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 360W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-3P
Pake / Ka : TO-3P-3, SC-65-3