Diodes Incorporated - DMN3067LW-13

KEY Part #: K6416375

DMN3067LW-13 Pricing (USD) [1046686PC Stock]

  • 1 pcs$0.03534
  • 10,000 pcs$0.03163

Nimewo Pati:
DMN3067LW-13
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET N-CH 30V 2.6A SOT-323.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Modil yo, Tiristors - SCR - Modil yo, Transistors - IGBTs - Single, Diodes - Zener - Single, Diodes - Rèkteur - Arrays and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMN3067LW-13 electronic components. DMN3067LW-13 can be shipped within 24 hours after order. If you have any demands for DMN3067LW-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN3067LW-13 Atribi pwodwi yo

Nimewo Pati : DMN3067LW-13
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET N-CH 30V 2.6A SOT-323
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.6A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
RD sou (Max) @ Id, Vgs : 67 mOhm @ 2.5A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 4.6nC @ 4.5V
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : 447pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 500mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-323
Pake / Ka : SC-70, SOT-323