Vishay Siliconix - SUD70090E-GE3

KEY Part #: K6418120

SUD70090E-GE3 Pricing (USD) [52246PC Stock]

  • 1 pcs$0.72749
  • 10 pcs$0.65558
  • 100 pcs$0.52672
  • 500 pcs$0.40966
  • 1,000 pcs$0.32109

Nimewo Pati:
SUD70090E-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 100V 50A DPAK TO252.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR, Diodes - Bridge rèktifikateur, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Arrays, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SUD70090E-GE3 electronic components. SUD70090E-GE3 can be shipped within 24 hours after order. If you have any demands for SUD70090E-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SUD70090E-GE3 Atribi pwodwi yo

Nimewo Pati : SUD70090E-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 100V 50A DPAK TO252
Seri : ThunderFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 50A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 7.5V, 10V
RD sou (Max) @ Id, Vgs : 8.9 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 50nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1950pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 125W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-252
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63