IXYS - IXTP24P085T

KEY Part #: K6398113

IXTP24P085T Pricing (USD) [50279PC Stock]

  • 1 pcs$0.89473
  • 10 pcs$0.80777
  • 100 pcs$0.64910
  • 500 pcs$0.50486
  • 1,000 pcs$0.41831

Nimewo Pati:
IXTP24P085T
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET P-CH 85V 24A TO-220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - RF, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Tiristors - TRIACs, Diodes - Rèkteur - Arrays, Modil pouvwa chofè and Transistors - IGBTs - Modil yo ...
Avantaj konpetitif:
We specialize in IXYS IXTP24P085T electronic components. IXTP24P085T can be shipped within 24 hours after order. If you have any demands for IXTP24P085T, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTP24P085T Atribi pwodwi yo

Nimewo Pati : IXTP24P085T
Manifakti : IXYS
Deskripsyon : MOSFET P-CH 85V 24A TO-220
Seri : TrenchP™
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 85V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 24A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 65 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 41nC @ 10V
Vgs (Max) : ±15V
Antre kapasite (Ciss) (Max) @ Vds : 2090pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 83W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB
Pake / Ka : TO-220-3

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