IGLD60R070D1AUMA1 Pricing (USD) [5863PC Stock]
- 1 pcs$7.02907
- Nimewo Pati:
- IGLD60R070D1AUMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- IC GAN FET 600V 60A 8SON.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - Zener - Single, Diodes - Zener - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge rèktifikateur, Tiristors - SCR and Diodes - Rèkteur - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IGLD60R070D1AUMA1 electronic components. IGLD60R070D1AUMA1 can be shipped within 24 hours after order. If you have any demands for IGLD60R070D1AUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IGLD60R070D1AUMA1 Atribi pwodwi yo
Nimewo Pati :
IGLD60R070D1AUMA1
Manifakti :
Infineon Technologies
Deskripsyon :
IC GAN FET 600V 60A 8SON
Seri :
CoolGaN™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
15A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-
RD sou (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
1.6V @ 2.6mA
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
-10V
Antre kapasite (Ciss) (Max) @ Vds :
380pF @ 400V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
114W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-LSON-8-1
Pake / Ka :
8-LDFN Exposed Pad
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